InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers

作者：Xien Sang, Yuan Xu, Mengshuang Yin, Fang Wang, Juin J. Liou, Yuhuai Liu · 发表于：Optoelectronics Letters · 年份：2024 · DOI：10.1007/s11801-024-3099-0 · 被引用次数：6 · 研究领域：GaN-based semiconductor devices and materials、Metal and Thin Film Mechanics、Ga2O3 and related materials