Degradation-Related Defect Level in Weathered Silicon Heterojunction Modules Characterized by Deep Level Transient Spectroscopy

作者：Steve Johnston, Dirk Jordan, Dana B. Kern, Kristopher O. Davis, Helio Moutinho, George F. Kroeger · 年份：2023 · DOI：10.1109/pvsc48320.2023.10359825 · 研究领域：Thin-Film Transistor Technologies、Silicon Nanostructures and Photoluminescence、Silicon and Solar Cell Technologies

Commercial silicon heterojunction modules known as heterojunction with intrinsic (amorphous silicon) thin-film layer (HIT) modules show average degradation after 10 years in the field. HIT modules weathered outdoors in Colorado and Florida have reduced photoluminescence intensity compared to a control module and have degradation dominated by voltage loss. Deep level transient spectroscopy (DLTS) detects three electron-trap defect states in all modules with activation energies of 0.07, 0.16, and 0.50eV. DLTS on the weathered modules shows an additional deep-level, electron-trap defect state with an activation energy of 0.52eV.