Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping

作者：Yanlin Wu, Muqin Nuo, Junjie Yang, Wei Lin, Xiaosen Liu, Xuelin Yang, Jinyan Wang, Yilong Hao, Bo Shen, Maojun Wang, Jin Wei · 发表于：IEEE Transactions on Electron Devices · 年份：2023 · DOI：10.1109/ted.2023.3336302 · 被引用次数：13 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design

This work investigates the effect of hole injection/light emission to suppress buffer-related dynamic${R}_{\text {ON}}$degradation in an E-mode GaN-on-Si active-passivation p-GaN gate high electron mobility transistor (AP-HEMT). The AP-HEMT features a thin p-GaN layer (i.e., the active passivation) covering the drain-side access region. The conventional p-GaN gate HEMT (Conv-HEMT) has been reported to mitigate the buffer trapping by hole injection/light emission from gate that pumps out the trapped electrons in buffer. In the AP-HEMT, hole injection and light emission occurs at the active passivation region as well. To evaluate the effectiveness of the hole/light pumping effect in AP-HEMT, back-gating measurements were performed to assess the recovery of buffer-related dynamic${R}_{\text {ON}}$. In the positive substrate voltage (${V}_{\text {SUB}}{)}$sweep test, the${I}_{\text {D}}$of Conv-HEMTs drops significantly during the back-sweep due to the negative charges trapped in the buffer. However, the AP-HEMT shows no reduction in${I}_{\text {D}}$during VSUB back-sweeps. In the recovery test after a${V}_{\text {SUB stress}}$, the AP-HEMT experiences much smaller initial${I}_{\text {D}}$degradation and recovers much faster than the Conv-HEMT. These results confirm that the hole/light pumping effect in the AP-HEMT effectively suppresses buffer-related dynamic${R}_{\text {ON}}$degradation.