Pulsed laser deposition of a Ga 2 O 3 thin film for an optoelectronic synaptic device

作者：Longxing Su, Sudong Wu, Xiaofei Wang, Ke Sun, Teng Yun, Yongping Du, Jianguo Lü · 发表于：Optics Letters · 年份：2023 · DOI：10.1364/ol.513737 · 被引用次数：9 · 研究领域：Advanced Memory and Neural Computing、Neural Networks and Reservoir Computing、Photoreceptor and optogenetics research

With the rapid development of information era, the traditional von Neumann architecture faces the computing bottleneck, and integration of memory and perception is regarded as a potential solution. Herein, a Ga 2 O 3 /Si heterojunction based multi-modulated optoelectronic synaptic device is fabricated and demonstrated. As stimulated by ultraviolet (UV) optical spikes, the heterojunction device reveals typical synaptic functions of excitatory-postsynaptic current (EPSC), paired-pulse facilitation (PPF), spike-timing-dependent plasticity (STDP), and switch between short-term memory (STM) and long-term memory (LTM). In addition, stronger stimulations like higher reading voltage, stronger optical stimulated intensity, and longer pulse duration time can significantly prolong the attenuation of EPSC, which contributes to the improvement of the forgetting process. Our work provides a potential strategy for future neuromorphic computation through a UV light driven stimulation.