Simple model of power generation in thermoradiative devices including realistic nonradiative processes

作者：I. Vurgaftman, J. R. Meyer · 发表于：APL Energy · 年份：2023 · DOI：10.1063/5.0181036 · 被引用次数：9 · 研究领域：Thermal Radiation and Cooling Technologies、Advanced Thermoelectric Materials and Devices、solar cell performance optimization

We formulate a simple model for the power densities generated by thermoradiative devices based on narrow-gap semiconductors. Our model is more realistic than previous treatments because it includes the effects of both Auger (impact ionization) and Shockley–Read–Hall (SRH) processes on the generated power. For known materials and based on optimal values for the energy gap and operating bias, maximum possible power densities are estimated in the presence of strong nonradiative processes. In particular, we derive best-case numerical projections for thermoradiative devices based on III-V type-II superlattices and bulk HgCdTe operating at practical temperatures and having a range of SRH lifetimes. Devices with strong Auger suppression and configured in nonplanar architectures with limited geometric fill factor can in principle attain power densities per unit active area approaching 10 W/m2. However, practical limitations will more likely constrain the generation density to <1 W/m2, which is at least two orders of magnitude lower than for a typical solar cell.