Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography

作者：Kai Ji, M. Schnedler, Qianqian Lan, Fengshan Zheng, Yifan Wang, Yan Lu, H. Eisele, J.‐F. Carlin, R. Butté, N. Grandjean, Rafal E. Dunin‐Borkowski, Ph. Ebert · 发表于：Applied Physics Express · 年份：2023 · DOI：10.35848/1882-0786/ad163d · 被引用次数：6 · 研究领域：Advanced Electron Microscopy Techniques and Applications、Silicon Carbide Semiconductor Technologies、Thin-Film Transistor Technologies

Abstract Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 °C. The healing processes result in an irreversible transition from defect-induced Fermi level pinning near the VB toward a midgap pinning induced by the crystalline-amorphous transition interface. Based on the measured pinning levels and the defect charge states, we identify the dominant defect type to be substitutional carbon on nitrogen sites.