Study of effects of varying parameters on the dislocation density in 200 mm SiC bulk growth

作者：Sheng'ou Lu, Binjie Xu, Hongyu Chen, Wei Hang, Rong Wang, Julong Yuan, Xiaodong Pi, Deren Yang, Xuefeng Han · 发表于：Journal of Crystal Growth · 年份：2023 · DOI：10.1016/j.jcrysgro.2023.127526 · 被引用次数：11 · 研究领域：Silicon Carbide Semiconductor Technologies、Silicon and Solar Cell Technologies、Aluminum Alloys Composites Properties