In Situ Defect Engineering of Controllable Carrier Types in WSe2 for Homomaterial Inverters and Self-Powered Photodetectors

作者：Ting Kang, Zheyi Lu, Liting Liu, Meizhen Huang, Yunxia Hu, Hongwei Liu, Ruixia Wu, Zhenjing Liu, Jiawen You, Yang Chen, Kenan Zhang, Xidong Duan, Ning Wang, Yuan Liu, Zhengtang Luo · 发表于：Nano Letters · 年份：2023 · DOI：10.1021/acs.nanolett.3c03328 · 被引用次数：22 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Graphene research and applications

WSe 2 has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe 2 still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe 2 is realized via in situ defect engineering. The n-doping of WSe 2 is attributed to Se vacancies induced by the H 2 flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe 2 synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H 2 during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe 2 . This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.