Evaluating the performance of an AlGaN based deep ultraviolet laser diode using graded waveguide layer and graded cladding layer

作者：Xien Sang, Haotian Di, Shanchun Zong, Yuan Xu, Mengshuang Yin, Fang Wang, Juin J. Liou, Yuhuai Liu · 发表于：Physica Scripta · 年份：2023 · DOI：10.1088/1402-4896/ad0e4c · 被引用次数：4 · 研究领域：GaN-based semiconductor devices and materials、Photocathodes and Microchannel Plates、Ga2O3 and related materials

Abstract To improve the output power and reduce electron leakage of a deep ultraviolet laser diode and optimize its performance,in this paper, the graded waveguide layer was first applied to a traditional AlGaN based deep ultraviolet laser diode, and four different combinations of the waveguide layer structure were simulated. Then a graded cladding layer structure with reduced thickness was added. Finally, the carrier concentration, energy band diagram, P-I curve, and optical confinement factor were numerically analysed and studied. The results demonstrate that, by using an Al-graded waveguide layer/p-cladding layer structure, the optical confinement factor of a laser diode with an emission wavelength of 267 nm, was 29.34%, and the maximum power was 89.81 mW at 100 mA current.