A 24-40 GHz Wideband LNA with Gain Compensation in 40-nm CMOS for 5G Applications

作者：Chenhao Fang, Qi Wu, Haiming Wang, Wei Hong · 年份：2023 · DOI：10.1109/ucmmt58116.2023.10310434 · 被引用次数：9 · 研究领域：Microwave Engineering and Waveguides、Radio Frequency Integrated Circuit Design、Antenna Design and Analysis

With the increasing demand for bandwidth in wireless communication systems, mm-Wave frequency is well worth researching. This work proposes a three-stage wideband LNA operating in the range from 24 to 40 GHz for 5G mm-Wave applications where an inductor-capacitor (LC) parallel resonant network is employed in the proposed LNA for compensating decreasing gain utilizing feedback. Moreover, a smooth gain over an extremely wide band can be obtained by adjusting the resonant frequency to control the pole of feedback. The proposed LNA is designed using a 40-nm CMOS process. A majority of inductors in this work possess high quality factor thereby guaranteeing signal integrity. According to the simulated results, a peak gain of 23 dB and a 3-dB bandwidth in the range from 21 to 40 GHz are achieved. The noise figure (NF) varies from 3.7 dB to 4.7 dB and a 1-dB compression point of -15.9 dBm is obtained at 32 GHz. The chip only occupies a footprint of 0.22mm2with all pads.