Rare three-valence-band convergence leading to ultrahigh thermoelectric performance in all-scale hierarchical cubic SnTe

作者：Fan Li, Xin Liu, Shurong Li, Xiaofan Zhang, Ni Ma, Xin-Jing Li, Xin-Yun Lin, Ling Chen, Haijun Wu, Li‐Ming Wu · 发表于：Energy & Environmental Science · 年份：2023 · DOI：10.1039/d3ee02482b · 被引用次数：86 · 研究领域：Advanced Thermoelectric Materials and Devices、Chalcogenide Semiconductor Thin Films、Perovskite Materials and Applications

Three-valence-band ( i.e. , L, Σ and Λ) charge transport and multiple-scale defects were simultaneously achieved in p-type SnTe through dual incorporation of MnCdTe 2 and Ge, which contributed to a record-high ZT of ∼1.97 at 900 K.