Doping engineering of monolayer MSe (M = Ga, In) by high-throughput first-principles calculations

作者：Zhineng Zhang, Yu Zhou, Puqin Zhao, Jun Zhu, Yingchun Cheng · 发表于：Computational Materials Science · 年份：2023 · DOI：10.1016/j.commatsci.2023.112622 · 被引用次数：6 · 研究领域：2D Materials and Applications、Chalcogenide Semiconductor Thin Films、MXene and MAX Phase Materials