Study on interface modulation effect on the resistive switching performance of HfO2-Based memory devices

作者：Jinyan Pan, Yuxiang Lin, Hongyang He, Shuya Yang, Maojing Li, Yulong Gao, Tiejun Li · 年份：2023 · DOI：10.1117/12.3011531 · 研究领域：Advanced Memory and Neural Computing、Electronic and Structural Properties of Oxides、Ferroelectric and Negative Capacitance Devices

Inserting an embedding layer is an attractive solution to modulate the resistive switching performance of the memory according to the interfacial modulation effect. In this work, HfO 2 -based resistive random access memory is investigated with an ultrathin embedding Al 2 O 3 layer. Three sets of memories were designed by embedding the ultrathin Al 2 O 3 layer at different positions in the sandwich device, taking advantage of the large forbidden band width and low Gibbs free energy of the Al 2 O 3 . The ultrathin Al 2 O 3 layer can modulate the energy band distribution, when inserted between HfO 2 and ITO electrode, it functions to reduce the loss of oxygen ions, thereby limiting the region of oxygen vacancy conductive filament rupture. The results show that the Al/HfO 2 /Al 2 O 3 /ITO memory has a higher resistance switching ratio and more stable endurance characteristics. Consequently, the ultrathin embedding layer dominates the resistive switching mechanism which is critical to formation and rupture of conductive filaments, and significantly to improve the endurance and uniformity of the resistive state.