The 2 GHz to 5 GHz GaAs Down Conversion Multi-Function Chip

作者：Yan Pu, Kaiqi Wan, R.H. de Nie, Yitong Xiong · 年份：2023 · DOI：10.1109/itoec57671.2023.10291422 · 被引用次数：3 · 研究领域：Radio Frequency Integrated Circuit Design、Semiconductor Quantum Structures and Devices、Microwave Engineering and Waveguides

A down conversion multi-function chip with GaAs pHEMT technology is presented in the paper. The whole chip contains a switch, a low noise amplifier (LNA), an attenuator and a down conversion mixer. The input RF frequency and the LO frequency are from 2 GHz to 5 GHz. The maximum gain of the whole circuit is about 17 dB. The noise figure is below 1.5 dB, and the RF input return loss、the LO input return loss are below -10 dB, which demonstrate a good performance. The whole chip works at a supply voltage of ±5 V with a power consumption of less than 450 mW.