Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes

作者：Yu Ding, Shenhui Zhou, Zhe Zhuang, Yimeng Sang, Junchi Yu, Feifan Xu, Jinpeng Huang, Weizong Xu, Tao Tao, Ting Zhi, Hai Lu, Kai Huang, Rong Zhang, Bin Liu · 发表于：Optics Express · 年份：2023 · DOI：10.1364/oe.507115 · 被引用次数：14 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、Photocathodes and Microchannel Plates

We proposed a "Ni sacrifice" method to fabricate Al-based highly reflective p-electrode in the ultraviolet spectral region for AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). The "Ni sacrifice" p-electrode could have a high optical reflectivity of around 90% at the DUV spectral region below 300 nm. Compared to Ni/Au, indium tin oxide (ITO), and Pd p-contacts, the "Ni sacrifice" led to a higher resistivity of p-contacts and a slightly higher operated voltage of the DUV-LEDs (within 0.6 V at 20 mA). Although the electrical performance was degraded slightly, the light output power and external quantum efficiency of the DUV-LEDs could be improved by utilizing the "Ni sacrifice" p-electrode. Besides, we introduced a grid of vias in the device mesa and reduced the diameter of the vias to achieve an enhanced peak external quantum efficiency (EQE) up to 1.73%. And the wall-plug efficiency (WPE) of DUV-LEDs with a "Ni sacrifice" p-electrode was higher than that of Ni/Au p-electrode DUV-LEDs at low currents. These results highlight the great potential of the proposed "Ni sacrifice" reflective p-electrode for use in DUV-LEDs.