Comparison Investigations on the Total Ionizing Dose Radiation of 4H-SiC MOS Structure Prepared With Different Nitrogen Annealing

作者：Yibo Zhang, Xiao-Yan Tang, Hao Yuan, Yancong Liu, Jingkai Guo, Zhiwen Zhang, Yu Zhou, Fengyu Du, Keyu Liu, Haohang Yang, Qingwen Song, Yuming Zhang · 发表于：IEEE Transactions on Nuclear Science · 年份：2023 · DOI：10.1109/tns.2023.3318838 · 被引用次数：14 · 研究领域：Silicon Carbide Semiconductor Technologies、Semiconductor materials and devices、Radiation Effects in Electronics

In this article, the effect of the different NO annealing time of 4H-SiC metal-oxide-semiconductor (MOS) capacitance and the n-type MOS field effect transistors (n-MOSFETs) for the total ionizing dose (TID) radiation are studied. We show that after 1250 °C 60 min NO annealing, the device balances between the channel mobility and radiation resistance. The mechanism of the effect of TID on the 4H-SiC gate oxide is studied. And the mechanism of the ledge effect for pMOS is clarified. Furthermore, the electrical characteristics of the n-MOSFET affected by TID are also discussed, showing that TID mainly affects the shift of threshold voltage and inconspicuously affects the channel mobility.