Preparation of nano SiC by carbothermic reduction of silicon cutting waste with phenolic resin

作者：Shengnan Jiang, Shuaibo Gao, Baojie Zhang, Xiaoxu Xu, Qifan Chen, Pengfei Xing · 发表于：International Journal of Applied Ceramic Technology · 年份：2023 · DOI：10.1111/ijac.14560 · 被引用次数：6 · 研究领域：Silicon Carbide Semiconductor Technologies、Advanced ceramic materials synthesis、Graphene research and applications

Abstract With the vigorous development of photovoltaic industry, considerable amount of silicon cutting waste (SCW) has been generated and aroused a series of environmental problems. Current recycling methods focus on reutilizing the waste to prepare low‐value industrial Si, Al‐Si alloy, SiC block, and so forth. Herein, we have fully utilized the fine characteristic of SCW to prepare high‐value nano SiC particles with an average diameter of ∼30 nm through carbothermal synthesis at 1500°C for 2 h, and under Ar atmosphere. In the synthesis process, the SCW serves as the Si source and the phenolic resin serves as the C source. The synthesis process mainly includes two stages: the pyrolysis of phenolic resin and the synthesis process. The fine particles of the SCW and the pyrolytic carbon from the phenolic resin contribute to the formation of the nano SiC. Besides, the photoluminescence and Thermal Gravimetric Analyzer (TGA) results show that the obtained SiC nanoparticle possesses a special photoluminescence and a favorable thermal stability.