A Low Conduction Loss IGBT With Hole Path and Temperature Sensing

作者：Hang Xu, Tianyang Feng, Jianbin Guo, Wenrong Cui, Yafen Yang, Qingqing Sun, David Wei Zhang · 发表于：IEEE Transactions on Electron Devices · 年份：2023 · DOI：10.1109/ted.2023.3306734 · 被引用次数：8 · 研究领域：Silicon Carbide Semiconductor Technologies、Advancements in Semiconductor Devices and Circuit Design、Thin-Film Transistor Technologies

A novel design for a low conduction loss carrier stored trench-gate bipolar transistor (CSTBT) with hole path and temperature sensing is proposed. Dummy gate is surrounded by a deep p-well and an$\text{n}^{+}$sense in floating p region is connected to the source to achieve real-time temperature sensing by applying reverse p-n junction. This design also helps to mitigate the electric field at the trench bottom. Moreover, the carrier stored (CS) layer can be heavily doped to obtain a lower ON-state voltage (${V} _{ \mathrm{\scriptscriptstyle ON}}$), thus improving the hole blocking capability. During the turn-off process, the p-well around the dummy trench can serve as a hole path to reduce turn-off loss (${E} _{ \mathrm{\scriptscriptstyle OFF}}$). Simulation results demonstrate that in comparison with the conventional CSTBT (Con-CSTBT), the turn-off fall time (${t} _{f}$) and${E} _{ \mathrm{\scriptscriptstyle OFF}}$are lowered by 68.7% and 52.3% at the same${V} _{ \mathrm{\scriptscriptstyle ON}}$of 1.54 V, respectively. Therefore, the proposed hole path CSTBT (HP-CSTBT) enables an effective and feasible approach toward real-time temperature sensing in power electronics. The proposed device features simple structure, low cost, and is fully compatible with the existing process. As such, it shows promising potential for practical applications.