Memory Performance Enhancement by Inducing Conductive Channel via Doping

作者：Hongyang He, Tiejun Li, Yuxiang Lin, Shuya Yang, Maojing Li, Jinyan Pan · 发表于：Journal of Physics Conference Series · 年份：2023 · DOI：10.1088/1742-6596/2566/1/012131 · 被引用次数：3 · 研究领域：Advanced Memory and Neural Computing、Ferroelectric and Negative Capacitance Devices、Semiconductor materials and devices

Abstract Due to the excellent nonvolatile resistance characteristics demonstrated by hafnium oxide, it is the potential to facilitate the use of resistive random access memory. In this paper, an ingenious method using doping to locate conductive channels is presented to improve the stable rheostatic performance of HfO 2 -based rheostatic memory. Metal particles are located to enhance the electric field locally to spur on conductive filaments in situ so that the resistive parameters V set and V reset are reduced, the relative fluctuation value (standard deviation/mean) of the V set is reduced from 22.57% to 18.16%, and that of V reset is reduced from 19.59% to 16.77%. Consequently, the device gains more stable resistance switching with a larger resistive window.