2.7 kV Low Leakage Vertical PtO x / β -Ga 2 O 3 Schottky Barrier Diodes With Self-Aligned Mesa Termination

作者：Zhao Han, Guangzhong Jian, Xuanze Zhou, Qiming He, Weibing Hao, Jinyang Liu, Botong Li, Hong Huang, Qiuyan Li, Xiaolong Zhao, Guangwei Xu, Shibing Long · 发表于：IEEE Electron Device Letters · 年份：2023 · DOI：10.1109/led.2023.3305389 · 被引用次数：73 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Advanced Photocatalysis Techniques

In this study, we fabricated superb β-Ga2O3Schottky barrier diodes (SBDs) with high breakdown voltage (Vbr) and low leakage through combining platinum oxide (PtOx) and anodic self-aligned mesa termination (SAMT). The PtOxthat forms a high barrier with β-Ga2O3enables the SAMT to function sufficiently. The in-situ annealing dry etch process repair the mesa sidewall and improve the Schottky contact well. SBDs with different mesa-etched depths (Dee) were systematically studied, including 0, 0.3, 0.6, 0.9, and 1.2 μm. The results showed that theVbrof the PtOx/β-Ga2O3SBD increased from 1120 V to 2738 V, yielding a high power figure of merit (PFOM) of 1.02 GW/cm2. Meanwhile, the device maintained a less than 10 μA/cm2leakage current density until -2000 V. Devices with radii of 200, 100, and 50 μm obtained highestVbrof 2508, 2772, and 2738 V at aDeeof 1.2 μm, respectively. The devices can be passivated by SU-8 withoutVbrdegradation. This work provides an effective method for further improving the performance of β-Ga2O3SBDs and promotes the application of β-Ga2O3power diodes.