Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources

作者：Sudip K. Mazumder, Lars F. Voss, Karen M. Dowling, Adam Conway, David L. Hall, Robert Kaplar, Gregory Pickrell, Jack Flicker, Andrew Binder, Srabanti Chowdhury, Victor Veliadis, Fang Luo, Sameh Khalil, Thomas Aichinger, S.R. Bahl, Matteo Meneghini, Alain B. Charles · 发表于：IEEE Journal of Emerging and Selected Topics in Power Electronics · 年份：2023 · DOI：10.1109/jestpe.2023.3277828 · 被引用次数：84 · 研究领域：Ga2O3 and related materials、GaN-based semiconductor devices and materials、ZnO doping and properties

This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.