High-Speed Vertical-Cavity Surface-Emitting 1550-nm-Range Lasers Manufactured by the Wafer Fusion Technology

作者：S. A. Blokhin, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, A. G. Kuzmenkov, N. A. Maleev, V. V. Andryushkin, V. E. Bugrov, A. G. Gladyshev, N. V. Kryzhanovskaya, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, A. Yu. Egorov · 发表于：Bulletin of the Lebedev Physics Institute · 年份：2023 · DOI：10.3103/s1068335623140026 · 被引用次数：3 · 研究领域：Semiconductor Lasers and Optical Devices、Photonic and Optical Devices、Semiconductor Quantum Structures and Devices

Abstract The results of studies of the characteristics of vertical-cavity surface-emitting lasers of 1550-nm spectral range with active region based on quantum InGaAs wells implemented within wafer fusion technology. Current and optical confinements are provided by buried tunnel junction n+/p+-InAlGaAs. In a wide range of temperatures, lasers with a mesa diameter of the buried tunnel junction of 7 μm demonstrated a threshold current ~1.5 mA, differential efficiency of ~0.49 W/A, the maximum output optical power of more than 4 mW, and the –3dB modulation bandwidth of approximately 9 GHz. It is revealed that, as the length of the optical link increases, the chromatic dispersion of the SMF-28 fiber and the parasitic frequency modulation of laser cause considerable distortions of the shape of output optical pulses, as well as the strengthening of intersymbol interference, which finally leads to disappearance of opening of the eye diagram. The maximum data rate using direct current modulation by the amplitude NRZ format reaches 30 Gb/s at 20°C for a short communication link (BTB configuration), and for a communication link of 2 km the maximum data rate is no more than 25 Gb/s.