Solvent-assisted sulfur vacancy engineering method in MoS 2 for a neuromorphic synaptic memristor

作者：Jiyeon Kim, Changik Im, Chan Lee, Jinwoo Hwang, Hyoik Jang, Jae‐Hak Lee, Minho Jin, Haeyeon Lee, Junyoung Kim, Junho Sung, Youn Sang Kim, Eunho Lee · 发表于：Nanoscale Horizons · 年份：2023 · DOI：10.1039/d3nh00201b · 被引用次数：22 · 研究领域：Advanced Memory and Neural Computing、Perovskite Materials and Applications、Transition Metal Oxide Nanomaterials

Novel solvent-assisted vacancy engineering (SAVE) is proposed for S vacancy generation in MoS 2 , considering the solubility and polarity of the solvent. The SAVE-treated MoS 2 synaptic memristor shows non-volatile memory characteristics and synaptic behavior.