Asynchronous Control for Tsetlin Machine with Binary Memristor-Transistor Array

作者：Omar Ghazal, Gang Maot, Tian Lan, Jesse Ojukwu, Fei Xia, Alex Yakovlev, Rishad Shafik · 年份：2023 · DOI：10.1109/iscas46773.2023.10181560 · 被引用次数：4 · 研究领域：Ferroelectric and Negative Capacitance Devices、Advanced Memory and Neural Computing、Quantum-Dot Cellular Automata

Tsetlin machines (TMs) are a novel machine learning paradigm based on learning automata and Boolean logic inference, with better energy-efficiency and explainability than neural networks. This work exploits non-volatile ReRAM-transistor memory arrays to perform efficient in-memory TM computing. To accommodate the large timing variability of ReRAM devices and enhance energy efficiency and speed, the control path is implemented with quasi delay-insensitive (QDI) asynchronous circuits. The design of these circuits are derived and synthesized from their signal-transition graph specifications using the Workcraft tool. The resulting circuits offer high event-driven controllability and high variation tolerance for the mixed-signal ReRAM data path. Compared to state of the art TM hardware, the new TM design uses less than 5% of the power to achieve better than$4\times$the performance.