Hfo2-Based Rram with In-Situ Conductive Channels Induced by Nanoparticles to Improve Stability

作者：Jinyan Pan, Hongyang He, Yaping Dan, Yuxiang Lin, Shuya Yang, Maojing Li, Tiejun Li · 发表于：SSRN Electronic Journal · 年份：2023 · DOI：10.2139/ssrn.4512670 · 被引用次数：1 · 研究领域：Advanced Memory and Neural Computing、Neuroscience and Neural Engineering、Ferroelectric and Negative Capacitance Devices