Tunable van der Waals Doping in WS 2 /CrOCl Heterostructure by Interlayer Coupling Engineering

作者：Dongdong Liu, Yu Zhou, Shengqian Zheng, Xiaochi Liu, Jian Sun, Zhuolun Li, Zhenxiao Zhang, Zhineng Zhang, Wang Shaolong, Dongyu Cai, Yingchun Cheng, Wei Huang · 发表于：ACS Applied Electronic Materials · 年份：2023 · DOI：10.1021/acsaelm.3c00674 · 被引用次数：9 · 研究领域：2D Materials and Applications、MXene and MAX Phase Materials、Ga2O3 and related materials

In contrast with substitutional doping, van der Waals doping is essential in two-dimensional (2D) semiconductors to avoid carrier scattering. Here, we take the WS 2 /CrOCl heterostructure (HS) as an example to investigate tunable van der Waals doping by uniaxial strain engineering. Because of different work functions, electrons transfer to CrOCl from WS 2, leading to electrostatic doping of WS 2 and a built-in electric field from WS 2 to CrOCl. Photoexcited electrons also transfer from WS 2 to CrOCl but are hindered by the built-in electric field, saturating the doping in WS 2 . Moreover, uniaxial strain can continuously modulate the interlayer coupling of WS 2 /CrOCl HS, leading not only to electrostatic doping but also to photoinduced doping in WS 2 . These results demonstrate that uniaxial strain is an effective strategy to tailor van der Waals doping in 2D semiconductors for applications in 2D electronics and optoelectronics.