Ultrasensitive and High-Speed Ga 2 O 3 Solar-Blind Photodetection Based on Defect Engineering

作者：Xueqiang Ji, Mingyu Liu, Zuyong Yan, Shan Li, Zeng Liu, Xiaohui Qi, Jian-Ying Yuan, Jinjin Wang, Yuanchun Zhao, Weihua Tang, Peigang Li · 发表于：IEEE Transactions on Electron Devices · 年份：2023 · DOI：10.1109/ted.2023.3283373 · 被引用次数：37 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Electronic and Structural Properties of Oxides

Oxygen vacancy (VO) defects are ubiquitous in oxide semiconductors and usually served as charge carriers recombination centers to depress the device performance. Herein, a surface VO defect compensation engineering is conducted to modulate the VO and improve the device performance of$\beta $-Ga2O3film via oxygen-plasma treatment. As a result, the photodetectors (PD) based on 30 min oxygen-plasma treated Gallium oxide (Ga2O3) film not only exhibit record-low dark current of 5 fA, over three orders of magnitude times higher responsivity rejection ratio (${R}_{{250}}/{R}_{{400}}{)}$, and faster rise and decay speed than the untreated device but also the oxygen-plasma-treated PDs exhibits exceptional sensitivity to detect extremely weak UV signals ($0.1 \mu \text{W}$/cm$^{{2}}{)}$with a photo-to-dark current ratio of$\sim 10^{{4}}$. Also, it is discovered that the device based on oxygen plasma has excellent photoelectric stabilities. The defect engineering with surface plasma treatment offers an efficient strategy for the high performance of Ga2O3film devices.