Increasing crystal plane orientation ratio of n-type Bi2WO6 to enhancing surface photovoltage due to higher hole mobility

作者：Yong‐Jie Hu, Chengyan Liu, Xiansheng Liu, Jianjun Tian, Chaoyang Kang, Weifeng Zhang · 发表于：Solar Energy · 年份：2023 · DOI：10.1016/j.solener.2023.06.010 · 被引用次数：11 · 研究领域：Transition Metal Oxide Nanomaterials、Gas Sensing Nanomaterials and Sensors、Ga2O3 and related materials

Enhancing photoelectric sensitivity of semiconductors is meaningful to develop novel photoelectric materials but still challenging for a pristine semiconductor. Here we increase the crystal plane orientation ratio for higher hole mobility to enhance the surface photovoltage of n -type Bi 2 WO 6 depending on the anisotropy of hole mobility. A strategy of hydrothermal synthesis and post-heating is adopted to prepare Bi 2 WO 6 . The diffraction peak relative intensity of (2 0 0) crystal plane in Bi 2 WO 6 increases with the post-heating temperature from 200 to 400 °C and then decreases. The surface photovoltage of nano-sheet Bi 2 WO 6 is enhanced to the maximum and then decreased with the diffraction peak change of (2 0 0) crystal plane. Theory calculation shows the hole effective mass of the crystal with (2 0 0) crystal plane is smaller than that of (1 1 3), indicating the higher hole mobility in (2 0 0) plane which contributes to the enhanced photovoltaic response. The investigation paves a way to enhance the photovoltaic properties of semiconductors by increasing the hole mobility depending on surface photovoltaic technology facilely.