Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures

作者：Xinyu Wang, Zuoheng Jiang, Junting Chen, Junlei Zhao, Han Wang, Chengcai Wang, Haohao Chen, Jun Ma, Xiaolong Chen, Mengyuan Hua · 年份：2023 · DOI：10.1109/ispsd57135.2023.10147433 · 被引用次数：9 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、ZnO doping and properties

The frozen trap effect can influence the threshold voltage of$p$-GaN gate HEMT when the temperature decreases to 15 K. The freezing of hole traps occurs at a higher temperature since their energy levels are deeper than that of electron traps, leading to a turning point of the threshold voltage and gate capacitance depending on temperatures. A high gate bias facilitates the emission of frozen carriers, which has a barrier-lowering effect, counteracting the frozen trap effect. At cryogenic temperatures, the threshold voltage of$p$-GaN gate HEMT becomes stable after long-time gate stress, showing promising potential for cryogenic applications.