Hole Mobility Boosters of (110)-Oriented Extremely Thin Body SiGe-on- Insulator (SGOI) pMOSFETs

作者：Chia-Tsong Chen, Xueyang Han, Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi · 发表于：IEEE Transactions on Electron Devices · 年份：2023 · DOI：10.1109/ted.2023.3279306 · 被引用次数：10 · 研究领域：Semiconductor materials and devices、Advancements in Semiconductor Devices and Circuit Design、Nanowire Synthesis and Applications

The effectiveness of (110)-oriented substrates and strain modulation by using starting substrates with thin SiGe and channel width narrowing on mobility enhancement in SiGe-on-insulator (SGOI) pMOSFETs is systematically investigated down to the body thickness (${T}_{\text {body}}{)}$of 3.2 nm. The initial strain of 1.6% is realized at a Ge fraction of 60% by using the optimized Ge condensation. We confirm the significant mobility enhancement by narrowing the channel width (${W}_{\text {ch}}{)}$of (110) SGOI channels, attributed to strong asymmetric strain. At${T}_{\text {body}}$of around 5 nm, (110) SGOI pMOSFETs provide higher hole mobility of 971 cm2/Vs than the ones fabricated on (100) GOI substrates, resulting in$1.9\times $mobility enhancement. The effective hole mobility of 291 cm2/Vs is also achieved on 3.2-nm-thick (110) SGOI pMOSFETs with asymmetric strain channels at${W}_{\text {ch}}$of 120 nm, leading to mobility enhancement of$1.5\times $against the mobility of quasi-uniaxial (100) GOI ones at the same${T}_{\text {body}}$despite the lower Ge fraction.