Surface Energy Mediated Sulfur Vacancy of ZnIn 2 S 4 Atomic Layers for Photocatalytic H 2 O 2 Production

作者：Kailian Zhang, Dan Meng, Jingfei Yang, Fengxiu Wu, Leigang Wang, Hua Tang, Zhao‐Qing Liu · 发表于：Advanced Functional Materials · 年份：2023 · DOI：10.1002/adfm.202302964 · 被引用次数：147 · 研究领域：Advanced Photocatalysis Techniques、Perovskite Materials and Applications、Gas Sensing Nanomaterials and Sensors

Abstract Constructing rich defect active site structure for material design is still a great challenge. Herein, a simple surface engineering strategy is demonstrated to construct one‐unit‐cell ZnIn 2 S 4 atomic layers with the modulated surface energy of S vacancy. Rich surface energy can regulate and control the rich S vacancy, which ensures rich active sites, higher charge density and effective carrier transport. As a result, the ZnIn 2 S 4 atomic layers with rich surface energy affords an obvious enhancement in H 2 O 2 productive rate of 1592.04 µmol g −1 h −1 , roughly 14.58 times superior to that with poor surface energy. Moreover, the in situ infrared diffuse reflection spectrum indicates that S vacancy as the oxygen reduction reaction active site is responsible for the critical intermediate *O 2 − and *OOH, corresponding to two‐electron oxygen reduction reaction. This study provides a valuable insight and guidance for constructing controllably defects to achieve highly efficient H 2 O 2 production.