Effects of Neutron Irradiation on Electrical Performance of β-Ga 2 O 3 Schottky Barrier Diodes

作者：Shaozhong Yue, Xuefeng Zheng, Yuehua Hong, Xiangyu Zhang, Fang Zhang, Yingzhe Wang, Xiaohua Ma, Yue Hao · 发表于：IEEE Transactions on Electron Devices · 年份：2023 · DOI：10.1109/ted.2023.3270124 · 被引用次数：48 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Electronic and Structural Properties of Oxides

The effect of neutron irradiation on the electrical performance of the$\beta $-Ga2O3 Schottky barrier diode (SBD) device has been studied in this work. After equivalent 1 MeV neutron irradiation with a fluence of$1\times 10^{{14}}$n/cm2, a 20% decrease in the forward current density (${J}_{\text {F}}{)}$, a 75% reduction in the reverse current density (${J}_{\text {R}}{)}$, and a 300 V increase in the breakdown voltage (${V}_{\text {br}}{)}$have been observed according to current–voltage (${I}$–${V}{)}$measurements. Utilizing the frequency-dependent conductance technique, it is found that the density of interface states located at Pt/Ga2O3 increases slightly from$2.6\times 10^{{12}}$–$6.4\times 10^{{12}}$to$2.9\times 10^{{12}}$–$7.0\times 10^{{12}}$cm$^{-{2}}$eV$^{-{1}}$with an increase in trap activation energy from 0.09–0.122 to 0.096–0.134 eV after neutron irradiation. Furthermore, based on the capacitance–voltage (${C}$–${V}{)}$measurement, it is observed that the carrier concentration across the Ga2O3 drift layer was decreased from$1.80\times 10^{{16}}$to$1.35\times 10^{{16}}$cm$^{-{3}}$after neutron irradiation. Considering the device performance change, it indicates that the bulk traps within the Ga2O3 drift layer instead of interface states dominate the device degradation.