Selective area doping of GaN toward high-power applications

作者：Romualdo A. Ferreyra, Bingjun Li, Sizhen Wang, Jung Han · 发表于：Journal of Physics D Applied Physics · 年份：2023 · DOI：10.1088/1361-6463/acd19d · 被引用次数：16 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and devices、Plasma Diagnostics and Applications

Abstract Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.