IGBT Peak Voltage Suppression Considering Stray Inductance of Mine-used Inverter

作者：Yue Wang, Han Shi, Rong Xiang, Youwan Xu · 年份：2022 · DOI：10.1109/ic2ecs57645.2022.10088120 · 被引用次数：2 · 研究领域：Silicon Carbide Semiconductor Technologies、Electrostatic Discharge in Electronics、Electromagnetic Compatibility and Noise Suppression

Due to the stray inductance of each component of the mine-used inverter, the insulated gate bipolar transistor (IGBT) will generate a high peak voltage during the switching transient process, resulting in fatigue and random failure of the IGBT, and paralysis of the mine-used inverter. Aiming at the above problems, firstly, a multi-physics domain co-simulation analysis method is proposed, which uses ANSYS to extract the stray inductance of the busbar and establish the IGBT behavior model. The effectiveness of the method is verified by the double-pulse experiment. Secondly, Secondly, the equivalent model of the main topology of the mine-sued inverter considering the stray inductance is established, and the influence of the stray inductance on the IGBT peak voltage is analyzed in combination with the switching frequency control, load conditions. Finally, it is verified by simulation and experiment that the diode-clamped absorption circuit proposed in this paper can effectively suppress the IGBT peak voltage and improve the voltage oscillation phenomenon.