Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone

作者：Kaiyue Song, Lingling Du, Guoli Yue, Tao Li, Hao‐Hong Li, Hao‐Hong Li, Shoutian Zheng, Huidong Zheng, Zhi‐Rong Chen, Huidong Zheng · 发表于：Journal of Colloid and Interface Science · 年份：2023 · DOI：10.1016/j.jcis.2023.03.192 · 被引用次数：15 · 研究领域：Perovskite Materials and Applications、Advanced Memory and Neural Computing、Conducting polymers and applications