Effect of Hydrogen on Electrical Performance of Pt/Au β-Ga 2 O 3 (001) Schottky Barrier Diodes

作者：Shaozhong Yue, Xuefeng Zheng, Yuehua Hong, Xiangyu Zhang, Fang Zhang, Yingzhe Wang, Ling Lv, Yanrong Cao, Xiaohua Ma, Yue Hao · 发表于：IEEE Transactions on Electron Devices · 年份：2023 · DOI：10.1109/ted.2023.3262226 · 被引用次数：17 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Electronic and Structural Properties of Oxides

The effect of hydrogen on$\beta $-gallium oxide (Ga2O3) (001) Schottky barrier diode (SBD) device has been studied in this article for the first time. It was found that the electrical performance of the$\beta $-Ga2O3 SBDs changed significantly after hydrogen treatment, including the turn-on voltage (${V}_{\text {on}}{)}$decreased by 0.3 V and the forward (${J}_{\text {F}}{)}$current density increased by 28frequency-dependent conductance technique, it is found that the time constants were decreased from 0.09–0.3 to 0.06–$0.09 ~\mu \text{s}$after hydrogen treatment. Meanwhile, the density of interface states decreases from$2.1\times 10^{{12}}$–$4.2\times 10^{{12}}$to$7.5\times 10^{{11}}$–$1.6\times 10^{{12}}$cm$^{-{2}}\cdot $eV−1 with a decrease in trap activation energy from 0.1–0.13 to 0.09–0.1 eV after hydrogen treatment. Utilizing the time-of-flight secondary ion mass spectrometry (TOF-SIMS), it is observed that the density of hydrogen at the Pt/Ga2O3 interface is increased by more than one order of magnitude for the device with hydrogen treatment. The effect of hydrogen on Pt/Au$\beta $-Ga2O3 SBDs can be mainly attributed to the passivation of traps by hydrogen atoms near the Pt/Ga2O3 interface.