Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current

作者：Jiyao Du, Taofei Pu, Xiaobo Li, Liuan Li, Jin‐Ping Ao, Hongwei Gao · 发表于：Journal of Crystal Growth · 年份：2023 · DOI：10.1016/j.jcrysgro.2023.127183 · 被引用次数：11 · 研究领域：GaN-based semiconductor devices and materials、Ga2O3 and related materials、ZnO doping and properties