Evidence of high-temperature exciton condensation in a two-dimensional semimetal

作者：Qiang Gao, Yang‐Hao Chan, Yuzhe Wang, Haotian Zhang, Pu Jinxu, Shengtao Cui, Yichen Yang, Zhengtai Liu, Dawei Shen, Zhe Sun, Juan Jiang, Tai C. Chiang, Peng Chen · 发表于：Nature Communications · 年份：2023 · DOI：10.1038/s41467-023-36667-x · 被引用次数：46 · 研究领域：2D Materials and Applications、Advanced Thermoelectric Materials and Devices、Topological Materials and Phenomena

Abstract Electrons and holes can spontaneously form excitons and condense in a semimetal or semiconductor, as predicted decades ago. This type of Bose condensation can happen at much higher temperatures in comparison with dilute atomic gases. Two-dimensional (2D) materials with reduced Coulomb screening around the Fermi level are promising for realizing such a system. Here we report a change in the band structure accompanied by a phase transition at about 180 K in single-layer ZrTe 2 based on angle-resolved photoemission spectroscopy (ARPES) measurements. Below the transition temperature, gap opening and development of an ultra-flat band top around the zone center are observed. This gap and the phase transition are rapidly suppressed with extra carrier densities introduced by adding more layers or dopants on the surface. The results suggest the formation of an excitonic insulating ground state in single-layer ZrTe 2 , and the findings are rationalized by first-principles calculations and a self-consistent mean-field theory. Our study provides evidence for exciton condensation in a 2D semimetal and demonstrates strong dimensionality effects on the formation of intrinsic bound electron–hole pairs in solids.