Superior Performance β-Ga 2 O 3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

作者：Feihong Wu, Yuangang Wang, Guangzhong Jian, Guangwei Xu, Xuanze Zhou, Wei Guo, Jiahong Du, Qi Liu, Shaobo Dun, Zhaoan Yu, Yuanjie Lv, Zhihong Feng, Shujun Cai, Shibing Long · 发表于：IEEE Transactions on Electron Devices · 年份：2023 · DOI：10.1109/ted.2023.3239062 · 被引用次数：60 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Electronic and Structural Properties of Oxides

Superior performance$\beta $-gallium oxide ($\beta $-Ga2O3) junction barrier Schottky (JBS) diode with a forward conduction current of 5.1 A (@2 V) and reverse breakdown voltage of 1060 V with an area of${3} \times {3}$mm2 is presented. Meanwhile, the high power figure of merit (PFOM) of 0.72 GW/cm2 is attributed to the implementation of the pn heterojunction and beveled field plate for a${0}.{1} \times {0}.{1}$mm2 diode. The switching characteristics of large-size$\beta $-Ga2O3 JBS after encapsulation reveal a short reverse recovery time of 26.8 ns under switching conditions of di / dt up to 400 A/$\mu \text{s}$. In addition, a hybrid half-wave (HW) Cockcroft–Walton (CW) voltage multiplier is built first together with commercial SiC SBD, and the results show the competitive characteristics of$\beta $-Ga2O3 JBS for SiC SBD, such as the almost same multiplication factor up to 3.81 in four-stage hybrid voltage multipliers compared with an all-SiC SBD-based circuit. The circuit efficiency is approximately 86.07% for$\beta $-Ga2O3 diode-based hybrid voltage multipliers. These results demonstrate the enormous application potential of$\beta $-Ga2O3 JBS significantly.