Spontaneously Oxidized Cu x O/β-Ga 2 O 3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection

作者：Chenyue Zhu, Xi-Shen Guo, Yihang Dai, Zhen Yang, Chunyan Wu, Li Wang, Xiang Zhang, Xiujuan Wang, Lin‐Bao Luo · 发表于：IEEE Transactions on Electron Devices · 年份：2022 · DOI：10.1109/ted.2022.3225135 · 被引用次数：20 · 研究领域：Ga2O3 and related materials、ZnO doping and properties、Electronic and Structural Properties of Oxides

In this work, we demonstrate the fabrication of CuxO/Ga2O3 heterojunction through the spontaneous oxidation of Cu film into CuxO layer during electron beam evaporation. The heterojunction device presents a ultraviolet (UV)/visible rejection ratio (${R}_{{265}}/{R}_{{430}}$) at zero bias of 435, enabling the self-powered deep-UV (DUV) photodetection. Upon 265-nm illumination (light intensity:$21.7 \mu \text{W}\cdot $cm$^{-{2}}$), the responsivity ($R$) and specific detectivity ($\text{D}^{\ast} $) reach 0.97 mA$\cdot \text{W}^{-{1}}$and$6.28\times 10^{{10}}$Jones, respectively. A fast response speed of 5.34/3.64 ms ($\tau _{r}/\tau _{f}$) has also been observed, which may ascribe to the fully depleted thin CuxO layer and suggest the ability to detect rapidly switched optical signal. This work sheds light on the facile fabrication of$\beta $-Ga2O3-based self-powered DUV photodetectors.