Optoelectronic synaptic device based on ZnO/HfOx heterojunction for high-performance neuromorphic vision system

作者：Xuanyu Shan, Chenyi Zhao, Ya Lin, Jilin Liu, Xiaohan Zhang, Ye Tao, Chunliang Wang, Xiaoning Zhao, Zhongqiang Wang, Haiyang Xu, Yichun Liu · 发表于：Applied Physics Letters · 年份：2022 · DOI：10.1063/5.0129642 · 被引用次数：39 · 研究领域：Advanced Memory and Neural Computing、Photoreceptor and optogenetics research、Neural dynamics and brain function

Optoelectronic synapses are considered to be important cornerstones in the construction of neuromorphic computing systems because of their low power consumption, high operating speeds, and high scalability. In this work, we demonstrate an optoelectronic synaptic device based on a ZnO/HfOx heterojunction in which optical potentiation/electrical depression behaviors and nonvolatile high current state can be implemented. The heterojunction device exhibits conductance evolution with high linearity. The excellent optoelectronic memristive behavior of the device can be attributed to the interface barrier between ZnO and HfOx, which hinders the recombination of photo-excited electron–hole pairs to increase the carrier lifetime, and realizes the nonvolatile high current state. More importantly, the artificial vision system based on optoelectronic synaptic devices can achieved a high recognition accuracy of 96.1%. Our work provides a feasible pathway toward the development of optoelectronic synaptic devices for use in high-performance neuromorphic vision systems.