Silicon improves the photosynthetic performance of oat leaves infected with Puccinia graminis f. sp. avenae

作者：Yinghao Li, Jinghui Liu, Pin Lv, Junzhen Mi, Baoping Zhao · 发表于：Frontiers in Plant Science · 年份：2022 · DOI：10.3389/fpls.2022.1037136 · 被引用次数：13 · 研究领域：Silicon Effects in Agriculture、Plant Stress Responses and Tolerance、Aluminum toxicity and tolerance in plants and animals

Stem rust, caused by Puccinia graminis f. sp. avenae ( Pga ) is a key disease affecting oat production worldwide. Silicon (Si) plays an essential role in enhancing plant resistance against pathogens. However, the scientific evidence of Si-mediated stem rust resistance of oat from the photosynthetic perspective has not been reported. The specific objective of this research was to investigate the effects of Si application on disease inhibition, photosynthetic gas exchange parameters, light response parameters, photosynthetic pigments and chlorophyll fluorescence parameters under Pga infection. Our results illustrated that Si application significantly reduced rust severity while the other parameters like net photosynthetic rate ( P n ), stomatal conductance ( Gs ), intercellular CO 2 concentration ( C i ) and transpiration rate ( T r ) were significantly increased. Si application increased maximum photosynthetic rate ( P nmax ) and light saturation point (LSP), while reduced the dark respiration rate (Rd) and light compensation point (LCP). The results also indicated that Si application significantly increased the activities of maximum fluorescence ( F m ), variable fluorescence ( F v ), maximum quantum yield of photosystem II ( F v / F m ), photochemical quenching (qP), photosynthetic performance index ( PI ABS ), actual PSII quantum yield (ΦPSII), electron transfer rate (ETR), the absorbed light energy per unit reaction center (ABS/RC) and the dissipated energy per unit reacti...