Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

作者：Yuhang Song, Zhiming Dai, Long Liu, Jinxiang Wu, Tingting Li, Xiaotian Zhao, Wei Liu, Zhidong Zhang · 发表于：Advanced Electronic Materials · 年份：2022 · DOI：10.1002/aelm.202200987 · 被引用次数：14 · 研究领域：Magnetic properties of thin films、Advanced Memory and Neural Computing、Magnetic and transport properties of perovskites and related materials

Abstract Field‐free switching is a critical issue for spin‐orbit torque‐induced magnetic random‐access memory (SOT‐MRAM) with perpendicular magnetic anisotropic (PMA) towards application. If only the spin‐polarized electrons along the y‐direction (σ y ) are used, deterministic switching cannot be achieved, as the electron polarization direction and easy magnetization direction are orthogonal. In this work, z‐direction polarized electrons (σ z ) produced by the spin Hall effect are utilized to provide the switching direction and σ y provides the propulsion of magnetic reorientation. With the cooperation of σ y and σ z by the spin Hall effect, field‐free switching is achieved. To combine with magnetic tunnel junction (MTJ), a model is proposed, in which heavy metals providing σ z are deposited on MTJ with asymmetric writing line widths. This model retains the characteristics of read‐write separation and realizes deterministic switching based on SOT.