Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay

作者：Longheng Qi, Xu Zhang, Wing Cheung Chong, Kei May Lau · 发表于：Photonics Research · 年份：2022 · DOI：10.1364/prj.465489 · 被引用次数：67 · 研究领域：GaN-based semiconductor devices and materials、Thin-Film Transistor Technologies、Nanomaterials and Printing Technologies

Full-color micro-LED displays are being widely developed and regarded as a primary option in current microdisplay technologies to fulfill the urgent demands of metaverse applications in the next decade. In this paper, a monolithic full-color micro-LED microdisplay with a resolution of 423 pixels per inch is demonstrated through the integration of a blue GaN-on-Si display module and a quantum dots photoresist (QDs-PR) color conversion module. The 400 × 240 active-matrix blue micro-LED display with a dominant wavelength of 440 nm was monolithically fabricated using GaN-on-Si epiwafers and flip-chip bonded on a custom-designed complementary metal-oxide semiconductor backplane. A color conversion module was independently fabricated on a 4-in. sapphire substrate by applying red and green QDs-PR arrays and a color filter array through the standard lithography process. Combining the blue GaN-on-Si micro-LED display module and the lithography-based QDs-PR color conversion module, a full-color micro-LED display was achieved with a wide color gamut up to 104% of the standard red, green, and blue and a maximum brightness of over 500 nits. The influence of blue light leakage resulting from the possible misalignment of flip-chip bonding and crosstalk in the bottom GaN-on-Si display was investigated in which the percentages of efficient pumping light for the blue, green, and red subpixels are around 95%, 89%, and 92%, respectively. This prototype demonstrates potential scalab...