Chiral Spin Textures for Next-Generation Memory and Unconventional Computing

作者：M. S. Nicholas Tey, Xiaoye Chen, Anjan Soumyanarayanan, Pin Ho · 发表于：ACS Applied Electronic Materials · 年份：2022 · DOI：10.1021/acsaelm.2c01023 · 被引用次数：24 · 研究领域：Magnetic properties of thin films、Ferroelectric and Negative Capacitance Devices、Physics of Superconductivity and Magnetism

The realization of chiral spin textures, comprising myriad distinct, nanoscale arrangements of spins with topological properties, has established pathways for engineering robust, energy-efficient, and scalable elements for non-volatile nanoelectronics. Particularly, current-induced manipulation of spin textures in nanowire racetracks and tunnel junction based devices are actively investigated for applications in memory, logic, and unconventional computing. In this Article, we paint a background on the progress of spin textures, as well as the relevant state-of-the-art techniques used for their development. In particular, we clarify the competing energy landscape of chiral spin textures─skyrmions and chiral domain walls, to tune their size, density, and zero-field stability. Next, we discuss the spin texture phenomenology and their response to extrinsic factors arising from geometric constraints, interwire interactions, and thermal-electrical effects. Finally, we reveal promising chiral spintronic memory and neuromorphic devices and discuss emerging material and device engineering opportunities.