Temperature-dependent current transport in quasi-vertical Pt/AlN/Al0.6Ga0.4N heterostructure Schottky barrier diodes with significant improved forward characteristic

作者：Junxue Ran, Renfeng Chen, Rui He, Xiaoli Ji, Yang Jiankun, Junxi Wang, Jinmin Li, Tongbo Wei · 发表于：Semiconductor Science and Technology · 年份：2022 · DOI：10.1088/1361-6641/ac9997 · 被引用次数：5 · 研究领域：GaN-based semiconductor devices and materials、Semiconductor materials and interfaces、Semiconductor materials and devices

Abstract In this letter, quasi-vertical Schottky barrier diodes (SBDs) based on AlN/Al 0.6 Ga 0.4 N heterostructure are fabricated and temperature-dependent current transport is systematically investigated. Benefited from the AlN/Al 0.6 Ga 0.4 N heterostructure with high net doping concentration of ∼1 × 10 18 cm −3 in Al 0.6 Ga 0.4 N, the device demonstrates lower ideality factor of 2.95, high on/off current ratio of ∼10 8 , the on-current of above 40 A cm −2 which is two order magnitude higher than that of the state-of-the-art AlN SBDs. The barrier inhomogeneity is characterized by the model of Gaussian distribution, and the reverse current observed is identified to be traps-related leakage process such as Poole–Frenkel emission and trap assisted tunneling. This work reveals the heterostructure engineering is an alternative pathway to overcome the difficulty of AlN-based SBDs.