Solution Deposition for Chalcogenide Perovskites: A Low-Temperature Route to BaMS 3 Materials (M = Ti, Zr, Hf)

作者：Jonathan W. Turnley, Kiruba Catherine Vincent, Apurva A. Pradhan, Isabel Panicker, Ryan N. Swope, Madeleine C. Uible, Suzanne C. Bart, Rakesh Agrawal · 发表于：Journal of the American Chemical Society · 年份：2022 · DOI：10.1021/jacs.2c06985 · 被引用次数：62 · 研究领域：Perovskite Materials and Applications、Chalcogenide Semiconductor Thin Films、Quantum Dots Synthesis And Properties

Chalcogenide perovskites, including BaZrS 3, have been suggested as highly stable alternatives to halide perovskites. However, the synthesis of chalcogenide perovskites has proven to be a significant challenge, often relying on excessively high temperatures and methods that are incompatible with device integration. In this study, we developed a solution-based approach to the deposition of BaZrS 3 . This method utilizes a combination of a soluble barium thiolate and nanoparticulate zirconium hydride. Following solution-based deposition of the precursors and subsequent sulfurization, BaZrS 3 can be obtained at temperatures as low as 500 °C. Furthermore, this method was extended to other chalcogenide perovskite (BaHfS 3 ) and perovskite-related (BaTiS 3 ) materials.