Atomic Layer Deposition of SnO 2 as an Electron Transport Material for Solid-State P-type Dye-Sensitized Solar Cells

作者：Haoliang Cheng, Yawen Liu, Bin Cai, Carl Hägglund, Tomáš Kubart, Gerrit Boschloo, Haining Tian · 发表于：ACS Applied Energy Materials · 年份：2022 · DOI：10.1021/acsaem.2c01328 · 被引用次数：18 · 研究领域：TiO2 Photocatalysis and Solar Cells、Advanced Photocatalysis Techniques、ZnO doping and properties

High Resolution Image Download MS PowerPoint Slide Tin oxide (SnO 2 ) as an electron transport material was prepared by atomic layer deposition in dye-sensitized NiO films to fabricate solid-state p-type dye-sensitized solar cells using two organic dyes PB6 and TIP as photosensitizers. Due to the excellent electron mobility and satisfactory penetration of SnO 2 material into the NiO film, a record photocurrent density over 1 mA cm –2 was achieved with a power conversion efficiency of 0.14%. The effect of an inserted Al 2 O 3 layer between the dye-sensitized NiO and SnO 2 layer on photovoltaic performance of the devices was also investigated. The results suggest that the charge recombination between NiO and SnO 2 can be significantly suppressed, showing prolonged charge lifetime and enhanced photovoltage.