Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors

作者：Penghui He, Ruohao Hong, Guoli Li, Xuming Zou, Wei Hu, Linfeng Lan, Benjamı́n Iñı́guez, Lei Liao, Xingqiang Liu · 发表于：IEEE Electron Device Letters · 年份：2022 · DOI：10.1109/led.2022.3204831 · 被引用次数：25 · 研究领域：Thin-Film Transistor Technologies、ZnO doping and properties、Ga2O3 and related materials

Aqueous route is readily for fabricating oxide thin-film transistors (TFTs), but the relative humidity (RH) impacts evolution of oxide thin films. Herein, the effect of RH on the electronic performance and bias stability of aqueous-processed Tb-doped indium oxide (Tb:In2O3) TFTs is investigated. The mobility is sensitive to RH. By tuning the RH for desirable thickness and density of the obtained Tb:In2O3 films, the TFTs present optimized mobility of 13.0 cm2/Vs, with high ON/OFF ratio of 108. Notably, low threshold voltage shift of −0.35 V and 0.42 V under negative and positive gate bias stress are simultaneously obtained with a fabricating RH of 40%. Moreover, dry ambience (RH$\le23$%) affords to abundant nanopores and defects, resulting in inferior performance and stability of the aqueous-processed oxide TFTs. And high humid ambience easily ruins the uniform of precursor films. This work indicates the strategy to fabricate highly stable oxide TFTs with high performance.