Optoelectronic Modulation of Silver Antimony Sulfide Thin Films for Photodetection

作者：Yujie Yang, Huihuang Huang, Songxue Bai, Fang Yao, Qianqian Lin · 发表于：The Journal of Physical Chemistry Letters · 年份：2022 · DOI：10.1021/acs.jpclett.2c02226 · 被引用次数：26 · 研究领域：Chalcogenide Semiconductor Thin Films、Quantum Dots Synthesis And Properties、Perovskite Materials and Applications

Silver antimony sulfide, as a ternary chalcogenide, has attracted great attention in the field of optoelectronics in recent years. In particular, it has appealing properties, such as excellent stability, solution processability, and versatile composition tunability. Benefiting from the recent development of processing techniques, AgSbS 2 has emerged as a promising candidate for next-generation, thin-film photovoltaics. On the contrary, AgSbS 2 -based photodetectors have been barely reported. In this work, we systematically investigated the composition engineering of silver antimony sulfide compounds with a precursor route. Their optoelectronic properties were fully characterized, and the composition was optimized for photodetection. High-performance phototransistors were first reported based on field-effect thin film transistors with interfacial modification. The obtained AgSbS 2 phototransistors exhibited relatively high photosensitivity, low dark current and noise, superior device stability, and excellent detectivity covering the whole range from ultraviolet to near-infrared, highlighting the great potential for next-generation photodetection.